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August 2007
FDC610PZ
P-Channel PowerTrench ? MOSFET
–30V, –4.9A, 42m ?
Features
Max r DS(on) = 42m ? at V GS = –10V, I D = –4.9A
Max r DS(on) = 75m ? at V GS = –4.5V, I D = –3.7A
Low gate charge (17nC typical).
High performance trench technology for extremely low r DS(on).
SuperSOT TM –6 package: small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
RoHS Compliant
tm
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench ? process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications:
load switching and power management, battery charging
circuits, and DC/DC conversion.
Application
DC - DC Conversion
S
D
D
G
D
D
1
2
6
5
D
D
Pin 1
D
D
G
3 3
4
S
SuperSOT TM -6
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
–30
±25
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
(Note 1a)
–4.9
–20
A
P D
T J , T STG
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
1.6
0.8
–55 to +150
W
° C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
78
156
°C/W
Package Marking and Ordering Information
Device Marking
.610Z
Device
FDC610PZ
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000units
?2007 Fairchild Semiconductor Corporation
FDC610PZ Rev.B
1
www.fairchildsemi.com
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